Dynamic state switching in nonlinear multiferroic cantilevers
نویسندگان
چکیده
We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured cantilevers when a high voltage is applied on the PbðZr0:52Ti0:48ÞO3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response. The reference frequency at which the strain-mediated Fe0:7Ga0:3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738991]
منابع مشابه
Multiferroic operation of dynamic memory based on heterostructured cantilevers.
Multiferroic heterostructures consisting of Pb(Zr0·52Ti0·48)O3 and Fe0.7Ga0.3 thin films are integrated on microfabricated Si cantilevers, and they are operated in a non-linear regime. Enhanced mechanical coupling at the multiferroic interface and tunability of the resonant frequency are used to devise bistable dynamic states that can be reversibly switched by both DC magnetic and electric fields.
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